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Categories | Infrared Photoelectric Sensor |
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Brand Name: | HAMAMATSU |
Model Number: | S6775 |
Place of Origin: | Japan |
MOQ: | 1 |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 2200 |
Delivery Time: | 3 days |
Packaging Details: | piping |
Reverse voltage (Max.): | 20 V |
Spectral response range: | 320 to 1100 nm |
Maximum sensitivity wavelength (typical value): | 960 nm |
Photosensitivity (typical value): | 0.55A /W |
Company Info. |
ShenzhenYijiajie Electronic Co., Ltd. |
Verified Supplier |
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Product List |
Product Description:
S6775 Silicon PIN Photodiode Plastic SIP (Single-in-line package)
Features:
S6775 is a silicon PIN photodiode with a large acceptor surface molded into a clear plastic SIP for detection in the near infrared range. This silicon PIN photodiode has the characteristics of high sensitivity, high speed response and large light absorption.
peculiarity
- Visible to the near infrared
- High sensitivity
- High speed response
- Get the shine
- Plastic package: 7 × 7.8mm
- Receiving surface size: 5.5 × 4.8mm
Receiving surface 5.5 × 4.8 mm
Encapsulation plastic
Package category --
Refrigeration uncooled type
Reverse voltage (Max.) 20 V
Spectral response range 320 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.55A /W
Dark current (Max.) 10000 pA
Cut-off frequency (typical value) 15 MHz
Junction capacitance (typical) 40 pF
Noise equivalent power (typical value) 1.8×10-14 W/Hz1/2
Typical values of measurement conditions Ta=25°C, sensitivity: λ = 780 nm, dark current: VR = 10 V, cut-off frequency: VR = 10 V, junction capacitance: VR = 10 V, f = 1 MHz, noise equivalent power: VR = 10 V, unless otherwise stated
Specifications:
Photosensitivity (typical value) | 0.55 A/W |
Dark current (Max.) | 10000 pA |
Rise time (typical value) | 0.5μs |
Junction capacitance (typical value) | 40 pF |
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