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STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

Categories Electronic IC Chips
Model Number: STF21NM50N
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 9500pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Description: N-Channel 500 V 18A (Tc) 30W (Tc) Through Hole TO-220FP
Drain-source Voltage: 500 V
Drain-gate Voltage: 500 V
Gate- source Voltage: ±25 V
Drain Current (pulsed): 72 A
Peak Diode Recovery voltage slope: 15 V/ns
Max. Operating Junction Temperature: 150 °C
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STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET


STP21NM50N-STF21NM50N-STW21NM50N

STB21NM50N - STB21NM50N-1

N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET


General Features


■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE


DESCRIPTION

The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters


APPLICATIONS

The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


Absolute Maximum ratings

SymbolParameterValueUnit
TO-220 / D2PAK / I2PAK / TO-247TO-220FP
VDSDrain-source Voltage (VGS = 0)500V
VDGRDrain-gate Voltage (RGS = 20 kΩ)500V
VGSGate- source Voltage±25V
IDDrain Current (continuous) at TC = 25°C1818 (*)A
IDDrain Current (continuous) at TC = 100°C1111 (*)A
IDM (•)Drain Current (pulsed)7272 (*)A
PTOTTotal Dissipation at TC = 25°C14030W
Derating Factor1.120.23W/°C
dv/dt(1)Peak Diode Recovery voltage slope15V/ns
VisoInsulation Winthstand Voltage (DC)--2500V
TstgStorage Temperature–55 to 150°C
TjMax. Operating Junction Temperature150°C

(•) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS


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Quality STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET for sale
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