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CGHV50200F

Categories RF JFET Transistors
Transistor Polarity :: N-Channel
Technology :: GaN
Product Category :: RF JFET Transistors
Mounting Style :: Screw
Gain :: 11.5 dB
Transistor Type :: HEMT
Output Power :: 180 W
Package / Case :: 4402015
Maximum Operating Temperature :: + 150 C
Vds - Drain-Source Breakdown Voltage :: 150 V
Packaging :: Tray
Maximum Drain Gate Voltage :: -
Id - Continuous Drain Current :: 17 A
Vgs - Gate-Source Breakdown Voltage :: - 10 V to + 2 V
Pd - Power Dissipation :: -
Manufacturer :: Wolfspeed / Cree
Description: RF JFET Transistors GaN HEMT 4.4-5.0GHz, 200 Watt
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CGHV50200F

The CGHV50200F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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